MBRF20200CT: Schottky Power Rectifier, Switch-mode, 20 A, 200 V
The Schottky Rectifier employs the Schottky Barrier principle in a large metal to silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes and polarity protection diodes.
特性- Highly Stable Oxide Passivated Junction
- Very Low Forward Voltage Drop
- Matched Dual Die Construction
- High Junction Temperature Capability
- High dv/dt Capability
- Guardring for Stress Protection
- Epoxy Meets UL94, VO at 1/8"
- Electrically Isolated. No Isolation Hardware Required.
- UL Recognized File #E69369Mechanical Characteristics:
- Case: Epoxy, Molded
- Weight: 1.9 grams (approximately)
- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
- Lead Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds
- Marking: B20200
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仿真模型 (4)
封装图纸 (1)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| MBRF20200CTG | Active | Pb-free | Schottky Power Rectifier, Switch-mode, 20 A, 200 V | TO-220 FULLPAK-3 | 221D-03 | NA | Tube | 50 | $0.9333 |
| MBRF20200CT | Last Shipments | | Schottky Power Rectifier, Switch-mode, 20 A, 200 V | TO-220 FULLPAK-3 | 221D-03 | NA | Tube | 50 | |
订购产品技术参数
| Product | Configuration | VRRM Min (V) | VF Max (V) | IRM Max (uA) | IO(rec) Max (A) | IFSM Max (A) | trr Max (ns) | Cj Max (pF) |
|---|
| MBRF20200CTG | Common Cathode | 200 | 1 | 1000 | 20 | 150 | | |
