MBT35200: High Current PNP Bipolar Transistor for Load Management in Portable Applications
Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
特性- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable
- These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant
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应用注释 (1)
数据表 (1)
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| TSOP-6 | 318G-02 (64.1kB) | V |
仿真模型 (4)
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| MBT35200MT1G | Active | AEC Qualified
Pb-free
Halide free | High Current PNP Bipolar Transistor for Load Management in Portable Applications | TSOP-6 | 318G-02 | 1 | Tape and Reel | 3000 | $0.1333 |
| SMBT35200MT1G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | High Current PNP Bipolar Transistor for Load Management in Portable Applications | TSOP-6 | 318G-02 | 1 | Tape and Reel | 3000 | $0.2045 |
订购产品技术参数
| Product | Polarity | IC Continuous (A) | V(BR)CEO Min (V) | VCE(sat) Max (V) | hFE Min | hFE Max | fT Min (MHz) | PTM Max (W) |
|---|
| MBT35200MT1G | PNP | 2 | 35 | 0.2 | 100 | 400 | 100 | 0.625 |
| SMBT35200MT1G | PNP | 2 | 35 | 0.2 | 100 | 400 | 100 | 0.625 |
