MJD148: 4 A, 45 V NPN Bipolar Power Transistor

The NPN Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications.

特性
  • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
  • Lead Formed Version Available in 16 mm Tape and Reel ("T4" Suffix)
  • High Gain - 50 Min @ IC = 2.0 Amps
  • Low Saturation Voltage - 0.5 V @ IC = 2.0 Amps
  • High Current Gain-Bandwidth Product - fT = 3.0 MHz Min @ IC = 250 mAdc
  • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These Devices are Pb-Free and are RoHS Compliant
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice ModelMJD148T4.LIB (0.0kB)0
Saber ModelMJD148T4.SIN (1.0kB)0
Spice2 ModelMJD148T4.SP2 (0.0kB)0
Spice3 ModelMJD148T4.SP3 (0.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
DPAK (SINGLE GAUGE) TO-252369C (59.1kB)E
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
NPN Silicon Power TransistorMJD148/D (105.0kB)8
产品订购型号
产品状况Compliance具体说明封装MSL*容器预算价格 (1千个数量的单价)
MJD148T4GActivePb-free Halide free4 A, 45 V NPN Bipolar Power TransistorDPAK-3369C1Tape and Reel2500$0.36
NJVMJD148T4GActiveAEC Qualified PPAP Capable Pb-free Halide free4 A, 45 V NPN Bipolar Power TransistorDPAK-3369C1Tape and Reel2500$0.396
MJD148T4Last Shipments4 A, 45 V NPN Bipolar Power TransistorDPAK-3369C1Tape and Reel2500
订购产品技术参数
ProductPolarityIC Continuous (A)V(BR)CEO Min (V)hFE MinhFE MaxfT Min (MHz)PTM Max (W)
MJD148T4GNPN44585375320
NJVMJD148T4GNPN44585375320
Datasheet
NPN Silicon Power Transistor (85kB) MJD148
Other
DPAK (SINGLE GAUGE) TO-252 NCV8408
PSpice Model MJD148
Saber Model MJD148
Spice2 Model MJD148
Spice3 Model MJD148