The Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD2955 (PNP) and MJD3055 (NPN) are complementary devices.
特性
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| Document Title | Document ID/Size | Revision | Revision Date |
|---|---|---|---|
| LIB Model for MJD3055 | MJD3055.LIB (0.0kB) | 0 | |
| SIN Model for MJD3055 | MJD3055.SIN (1.0kB) | 0 | |
| SP2 Model for MJD3055 | MJD3055.SP2 (0.0kB) | 0 | |
| SP3 Model for MJD3055 | MJD3055.SP3 (0.0kB) | 0 |
| Document Title | Document ID/Size | Revision |
|---|---|---|
| DPAK (SINGLE GAUGE) TO-252 | 369C (59.1kB) | E |
| Document Title | Document ID/Size | Revision | Revision Date |
|---|---|---|---|
| Complementary Power Transistors | MJD2955/D (132.0kB) | 13 |
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） | ||
|---|---|---|---|---|---|---|---|---|---|
| MJD3055G | Last Shipments | AEC Qualified Pb-free Halide free | 10 A, 60 V NPN Bipolar Power Transistor | DPAK-3 | 369C | 1 | Tube | 75 | |
| MJD3055T4G | Active | Pb-free Halide free | 10 A, 60 V NPN Bipolar Power Transistor | DPAK-3 | 369C | 1 | Tape and Reel | 2500 | $0.32 |
| NJVMJD3055T4G | Active | AEC Qualified PPAP Capable Pb-free Halide free | 10 A, 60 V NPN Bipolar Power Transistor | DPAK-3 | 369C | 1 | Tape and Reel | 2500 | $0.352 |
| MJD3055 | Last Shipments | 10 A, 60 V NPN Bipolar Power Transistor | DPAK-3 | 369C | 1 | Tube | 75 | ||
| MJD3055T4 | Last Shipments | 10 A, 60 V NPN Bipolar Power Transistor | DPAK-3 | 369C | 1 | Tape and Reel | 2500 | ||
| Product | Polarity | IC Continuous (A) | V(BR)CEO Min (V) | hFE Min | hFE Max | fT Min (MHz) | PTM Max (W) |
|---|---|---|---|---|---|---|---|
| MJD3055T4G | NPN | 10 | 60 | 20 | 100 | 2 | 20 |
| NJVMJD3055T4G | NPN | 10 | 60 | 20 | 100 | 2 | 20 |