MJD32: 3 A, 40 V PNP Bipolar Power Transistor

The Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD31, MJD31C (NPN); and MJD32, MJD32C (PNP) are complementary devices.

特性
  • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
  • Lead Formed Version in 16 mm Tape and Reel ("T4G" Suffix)
  • Electrically Similar to Popular TIP31 and TIP32 Series
  • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These Devices are Pb-Free and are RoHS Compliant
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice ModelMJD32T4.LIB (0.0kB)0
Saber ModelMJD32T4.SIN (1.0kB)0
Spice2 ModelMJD32T4.SP2 (0.0kB)0
Spice3 ModelMJD32T4.SP3 (0.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
DPAK (SINGLE GAUGE) TO-252369C (59.1kB)E
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Complementary Power TransistorsMJD31/D (135kB)13
产品订购型号
产品状况Compliance具体说明封装MSL*容器预算价格 (1千个数量的单价)
MJD32RLGActiveAEC Qualified Pb-free Halide free3 A, 40 V PNP Bipolar Power TransistorDPAK-3369C1Tape and Reel1800$0.2288
MJD32T4GActivePb-free Halide free3 A, 40 V PNP Bipolar Power TransistorDPAK-3369C1Tape and Reel2500$0.1853
NJVMJD32T4GActiveAEC Qualified PPAP Capable Pb-free Halide free3 A, 40 V PNP Bipolar Power TransistorDPAK-3369C1Tape and Reel2500$0.22
订购产品技术参数
ProductPolarityIC Continuous (A)V(BR)CEO Min (V)hFE MinhFE MaxfT Min (MHz)PTM Max (W)
MJD32RLGPNP3401050315
MJD32T4GPNP3401050315
NJVMJD32T4GPNP3401050315
Complementary Power Transistors (95kB) MJD32C
PSpice Model MJD32
Saber Model MJD32
Spice2 Model MJD32
Spice3 Model MJD32
DPAK (SINGLE GAUGE) TO-252 NCV8408