MJD5731: 1.0 A, 350 V High Voltage PNP Bipolar Power Transistor
The High Voltage Bipolar PNP Power Transistor is designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications.
特性- 350 V (Min) Vceo(sus)
- 1.0 A Rated Collector Current
- PNP Complement to the MJD47-50 Series
- These Devices are Pb-Free and are RoHS Compliant
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仿真模型 (4)
封装图纸 (1)
数据表 (1)
产品订购型号
产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价) |
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MJD5731T4G | Active | Pb-free
Halide free | 1.0 A, 350 V High Voltage PNP Bipolar Power Transistor | DPAK-3 | 369C | 1 | Tape and Reel | 2500 | $0.3051 |
MJD5731T4 | Last Shipments | | 1.0 A, 350 V High Voltage PNP Bipolar Power Transistor | DPAK-3 | 369C | 1 | Tape and Reel | 2500 | |
订购产品技术参数
Product | Polarity | IC Continuous (A) | V(BR)CEO Min (V) | hFE Min | hFE Max | fT Min (MHz) | PTM Max (W) |
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MJD5731T4G | PNP | 1 | 350 | 30 | 175 | 10 | 15 |