MJE350: 0.5 A, 300 V PNP Bipolar Power Transistor

The PNP Bipolar Power Transistor is designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability.

特性
  • High Collector-Emitter Sustaining Voltage - VCEO(sus) = 300 Vdc @ IC = 1.0 mAdc
  • Excellent DC Current Gain - hFE = 30-240 @ IC = 50 mAdc
  • Plastic Thermopad Package
  • Pb-Free Package is Available
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice ModelMJE350.LIB (0.0kB)0
Saber ModelMJE350.SIN (1.0kB)0
Spice2 ModelMJE350.SP2 (0.0kB)0
Spice3 ModelMJE350.SP3 (0.0kB)0
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Plastic Medium-Power PNP Silicon TransistorMJE350/D (97kB)17DEC, 2013
产品订购型号
产品状况Compliance具体说明封装MSL*容器预算价格 (1千个数量的单价)
MJE350GActivePb-free Halide free0.5 A, 300 V PNP Bipolar Power TransistorTO-225-377-09NABulk Box500$0.208
MJE350Last Shipments0.5 A, 300 V PNP Bipolar Power TransistorTO-225-377-09NABulk Box500
订购产品技术参数
ProductPolarityIC Continuous (A)V(BR)CEO Min (V)hFE MinhFE MaxfT Min (MHz)PTM Max (W)
MJE350GPNP0.530030240-20
Plastic Medium-Power PNP Silicon Transistor (97kB) MJE350
PSpice Model MJE350
Saber Model MJE350
Spice2 Model MJE350
Spice3 Model MJE350
TO-225 2N5657