MJE4343: 16 A, 160 V NPN Bipolar Power Transistor

The Bipolar Power Transistor is designed for use in high power audio amplifier applications and high voltage switching regulator circuits. The MJE4343 and MJE4353 are complementary devices

特性
  • High Collector-Emitter Sustaining Voltage - VCEO(sus) = 160 Vdc - NPN - MJE4343 PNP - MJE4353
  • High DC Current Gain - @ IC = 8.0 AdchFE = 35 (Typ)
  • Low Collector-Emitter Saturation Voltage -VCE(sat) = 2.0 Vdc (Max) @ IC = 8.0 Adc
  • These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice ModelMJE4343.LIB (0.0kB)0
Saber ModelMJE4343.SIN (1.0kB)0
Spice2 ModelMJE4343.SP2 (0.0kB)0
Spice3 ModelMJE4343.SP3 (0.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
SOT-93 (T0-218) 4 LEAD340D-02 (67.7kB)E
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
High-Voltage - High Power TransistorsMJE4343/D (132.0kB)5
产品订购型号
产品状况Compliance具体说明封装MSL*容器预算价格 (1千个数量的单价)
MJE4343GActivePb-free16 A, 160 V NPN Bipolar Power TransistorSOT-93-3 / TO-218-3340D-02NATube30$1.8666
MJE4343Last Shipments16 A, 160 V NPN Bipolar Power TransistorSOT-93-3 / TO-218-3340D-02NATube30
订购产品技术参数
ProductPolarityIC Continuous (A)V(BR)CEO Min (V)hFE MinhFE MaxfT Min (MHz)PTM Max (W)
MJE4343GNPN1616015-1125
High-Voltage - High Power Transistors (132.0kB) MJE4343
PSpice Model MJE4343
Saber Model MJE4343
Spice2 Model MJE4343
Spice3 Model MJE4343
TO-247 TIP36C
SOT-93 (T0-218) 4 LEAD TIP36C