MJE5851: 8.0 A, 350 V PNP Bipolar Power Transistor

The MJE5850, MJE5851 and the MJE5852 transistors are designed for high voltage, high speed, power switching in inductive circuits where fall time is critical.

特性
  • Pb-Free Packages are Available
应用
  • Switching Regulators Inverters Solenoid and Relay Drivers Motor Controls Deflection Circuits
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice ModelMJE5851.LIB (0.0kB)0
Saber ModelMJE5851.SIN (1.0kB)0
Spice2 ModelMJE5851.SP2 (0.0kB)0
Spice3 ModelMJE5851.SP3 (0.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
TO-220 3 LEAD STANDARD221A-09 (30.9kB)AH
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Switch-mode Series PNP Silicon Power TransistorsMJE5850/D (98kB)7
产品订购型号
产品状况Compliance具体说明封装MSL*容器预算价格 (1千个数量的单价)
MJE5851GActivePb-free8.0 A, 350 V PNP Bipolar Power TransistorTO-220-3221A-09NATube50$2.0
MJE5851Last Shipments8.0 A, 350 V PNP Bipolar Power TransistorTO-220-3221A-09NATube50
订购产品技术参数
ProductPolarityIC Continuous (A)V(BR)CEO Min (V)hFE MinhFE MaxfT Min (MHz)PTM Max (W)
MJE5851GPNP835015--80
Switch-mode Series PNP Silicon Power Transistors (98kB) MJE5852
PSpice Model MJE5851
Saber Model MJE5851
Spice2 Model MJE5851
Spice3 Model MJE5851
TO-220 3 LEAD STANDARD NTP6412AN