MJW21196: Bipolar Transistor, NPN, 250 V, 16 A

The MJW21196 NPN Bipolar Complementary Audio Power Transistor utilizes Perforated Emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications.

Features
  • Total Harmonic Distortion Characterized
  • High DC Current Gain –hFE = 20 Min @ IC = 8 Adc
  • Excellent Gain Linearity
  • High SOA: 2.25 A, 80 V, 1 Second
  • Pb-Free Packages are Available
Packages
Simulation Models (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice ModelMJW21196.LIB (0.0kB)0
Saber ModelMJW21196.SIN (1.0kB)0
Spice2 ModelMJW21196.SP2 (0.0kB)0
Spice3 ModelMJW21196.SP3 (0.0kB)0
Package Drawings (1)
Document TitleDocument ID/SizeRevision
TO-247340L-02 (57.4kB)F
Data Sheets (1)
Document TitleDocument ID/SizeRevisionRevision Date
Silicon Power TransistorsMJW21195/D (157.0kB)3
Order Information
ProductStatusCompliancePackageMSL*ContainerBudgetary Price/Unit
MJW21196GActivePb-free Halide freeTO-247-3340L-02NATube30$2.0
MJW21196Last ShipmentsTO-247-3340L-02NATube30
Specifications
ProductPolarityIC Continuous (A)VCEO(sus) Min (V)hFE MinhFE MaxPTM Max (W)fT Min (MHz)
MJW21196GNPN1625020802004
Silicon Power Transistors (157.0kB) MJW21196
PSpice Model MJW21196
Saber Model MJW21196
Spice2 Model MJW21196
Spice3 Model MJW21196
TO-247 NGTG50N60FWG