MMBT2222AW: NPN Bipolar Transistor
The NPN Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-323/SC-70 package, which is designed for low power surface mount applications.
特性- Low rDS(on) Provides Higher Efficiency and Extends Battery Life
- Miniature SC-70/SOT-323 Surface Mount Package Saves Board Space
- Pb-Free Package is Available
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
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数据表 (1)
封装图纸 (1)
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| MMBT2222AWT1G | Active | AEC Qualified
Pb-free
Halide free | NPN Bipolar Transistor | SC-70-3 / SOT-323-3 | 419-04 | 1 | Tape and Reel | 3000 | $0.0356 |
| MMBT2222AWT3G | Active | AEC Qualified
Pb-free
Halide free | NPN Bipolar Transistor | SC-70-3 / SOT-323-3 | 419-04 | 1 | Tape and Reel | 10000 | $0.0356 |
| SMMBT2222AWT1G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | NPN Bipolar Transistor | SC-70-3 / SOT-323-3 | 419-04 | 1 | Tape and Reel | 3000 | $0.0392 |
| MMBT2222AWT1 | Last Shipments | | NPN Bipolar Transistor | SC-70-3 / SOT-323-3 | 419-04 | 1 | Tape and Reel | 3000 | |
订购产品技术参数
| Product | Polarity | IC Continuous (A) | V(BR)CEO Min (V) | hFE Min | hFE Max | fT Min (MHz) | PTM Max (W) |
|---|
| MMBT2222AWT1G | NPN | 0.6 | 40 | 100 | 300 | 300 | 0.15 |
| MMBT2222AWT3G | NPN | 0.6 | 40 | 100 | 300 | 300 | 0.15 |
| SMMBT2222AWT1G | NPN | 0.6 | 40 | 100 | 300 | 300 | 0.15 |
