MMBT5088L: NPN Bipolar Transistor
This NPN Bipolar transistor is designed for high gain, low noise general purpose amplifier applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.
特性- Low rDS(on) Provides Higher Efficiency and Extends Battery Life
- Miniature SOT-23 Surface Mount Package Saves Board Space
- Pb-Free Packages are Available
- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
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数据表 (1)
封装图纸 (1)
Document Title | Document ID/Size | Revision |
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SOT-23 | 318-08 (62.5kB) | AP |
产品订购型号
产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价) |
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MMBT5088LT1G | Active | AEC Qualified
Pb-free
Halide free | NPN Bipolar Transistor | SOT-23-3 | 318-08 | 1 | Tape and Reel | 3000 | $0.0427 |
NSVMMBT5088LT3G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | NPN Bipolar Transistor | SOT-23-3 | 318-08 | 1 | Tape and Reel | 10000 | $0.0513 |
SMMBT5088LT1G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | NPN Bipolar Transistor | SOT-23-3 | 318-08 | 1 | Tape and Reel | 3000 | $0.0551 |
MMBT5088LT1 | Last Shipments | | NPN Bipolar Transistor | SOT-23-3 | 318-08 | 1 | Tape and Reel | 3000 | |
订购产品技术参数
Product | Polarity | IC Continuous (A) | V(BR)CEO Min (V) | hFE Min | hFE Max | fT Min (MHz) | PTM Max (W) |
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MMBT5088LT1G | NPN | 0.05 | 30 | 300 | 900 | 50 | 0.225 |
NSVMMBT5088LT3G | NPN | 0.05 | 30 | 300 | 900 | 50 | 0.225 |
SMMBT5088LT1G | NPN | 0.05 | 30 | 300 | 900 | 50 | 0.225 |