NDBA180N10B: Power MOSFET, 100V, 2.8mΩ, 180A, N-Channel
This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This devices is suitable for applications with low gate charge driving or ultra low on resistance requirements.
特性- Ultra Low On-Resistance
- Low Gate Charge
- High Speed Switching
- 100% Avalanche Tested
- Pb-Free, Halogen Free and RoHS Compliance
| 优势- Improves efficiency by reducing conduction losses
- Ease of drive, faster turn-on
- Reduces dynamic power losses
- Voltage overstress safeguard
- Environment friendliness
|
应用- Battery Protection
Motor Drive
Primary Side Switch
Secondary Side Synchronous Rectification
| 终端产品- Multi-Cells Battery Pack (ESS, E-Bike, P-Tool)
Other Motor
Power Supply
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数据表 (1)
仿真模型 (1)
封装图纸 (1)
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NDBA180N10BT4H | Active | Pb-free
Halide free | Power MOSFET, 100V, 2.8mΩ, 180A, N-Channel | D2PAK-3 | 418AJ | 1 | Tape and Reel | 800 | $1.8037 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| NDBA180N10BT4H | N-Channel | Single | 100 | 20 | 4 | 180 | 200 | | | 3 | | 95 | | 580 | 6950 | 3000 | 15 |
