NDD03N80Z: Power MOSFET 800V 2.9A 4.5 Ohm Single N-Channel DPAK
Power MOSFET 800V 2.9A 4.5 Ohm Single N-Channel DPAK
特性- ESD diode-protected gate
- 100% Avalanche Tested
- This Device is PbFree, Halogen Free/BFR Free and RoHS Compliant
- 100% Rg Tested
| 优势 |
仿真模型 (4)
封装图纸 (2)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NDD03N80Z-1G | Active | Pb-free
Halide free | Power MOSFET 800V 2.9A 4.5 Ohm Single N-Channel DPAK | IPAK-4 | 369D | 3 | Tube | 75 | $0.4667 |
| NDD03N80ZT4G | Active | Pb-free
Halide free | Power MOSFET 800V 2.9A 4.5 Ohm Single N-Channel DPAK | DPAK-3 | 369AA | 3 | Tape and Reel | 2500 | $0.4667 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| NDD03N80Z-1G | N-Channel | Single | 800 | 30 | 4.5 | 2.9 | 96 | | | 4500 | | 17 | 9.1 | 1.3 | 440 | 52 | 9 |
| NDD03N80ZT4G | N-Channel | Single | 800 | 30 | 4.5 | 2.9 | 96 | | | 4500 | | 17 | 9.1 | 1.3 | 440 | 52 | 9 |
