NDDP010N25AZ: Power MOSFET, 250V, 10A, 420mΩ, Single N-Channel
This N-Channel Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize input capacitance and gate charge. This devices is suitable for applications with low gate charge driving requirements.
特性- High Speed Switching
- ESD Diode-Protected Gate
- Low Gate Charge
- 100% Avalanche Tested
- Pb-Free, Halogen Free and RoHS Compliance
| 优势- Reduces dynamic power losses
- ESD resistance
- Ease of drive, faster turn-on
- Voltage overstress safeguard
- Environment friendliness
|
应用- Battery Protection
Motor Drive
Primary Side Switch
Secondary Side Synchronous Rectification
| 终端产品- Multi-Cells Battery Pack (ESS, E-Bike, P-Tool)
Other Motor
Power Supply
|
数据表 (1)
封装图纸 (2)
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NDDP010N25AZ-1H | Active | Pb-free
Halide free | Power MOSFET, 250V, 10A, 420mΩ, Single N-Channel | IPAK / TP | 369AJ | NA | Bulk Bag | 500 | $0.3333 |
| NDDP010N25AZT4H | Active | Pb-free
Halide free | Power MOSFET, 250V, 10A, 420mΩ, Single N-Channel | DPAK / TP-FA | 369AH | 1 | Tape and Reel | 700 | $0.3333 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| NDDP010N25AZ-1H | N-Channel | Single | 250 | 30 | 4.5 | 10 | 52 | | | 420 | | 16 | | 540 | 980 | 80 | 25 |
| NDDP010N25AZT4H | N-Channel | Single | 250 | 30 | 4.5 | 10 | 52 | | | 420 | | 16 | | 540 | 980 | 80 | 25 |
