NGD8201B: Ignition IGBT
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over−Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
特性- Ideal for coil on plug applications
- Gate-Emitter ESD Protection
- New Design Increases UIS Energy per Unit Area
- Low Saturation Voltage
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应用 | 终端产品- Automotive and Motor Bike Ignition Applications
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数据表 (1)
封装图纸 (1)
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NGD8201BNT4G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | Ignition IGBT, high energy capable IGNITION IGBT | DPAK-3 | 369C | 1 | Tape and Reel | 2500 | $0.45 |
订购产品技术参数
| Product | V(BR)CES Typ (V) | IC Max (A) | VCE(sat) Typ (V) | VF Typ (V) | Eoff Typ (mJ) | Eon Typ (mJ) | Trr Typ (ns) | Irr Typ (A) | Gate Charge Typ (nC) | Short Circuit Withstand (us) | EAS Typ (mJ) | PD Max (W) | Co-Packaged Diode |
|---|
| NGD8201BNT4G | 400 | 20 | 1.5 | | | | | | | | 435 | 115 | No |
