NGD8205A: Ignition IGBT, N-Channel, 20 A, 350 V
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil driver applications. Primary uses include Ignition, Direct Fuel Injections, or wherever high voltage and high current switching is required.
特性- Ideal for Coil-on-Plug and Driver-on-Coil Applications
- DPAK Package Offers Smaller Footprint for Increased Board Space
- Gate-Emitter ESD Protection
- Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load
- Integrated ESD Diode Protection
- Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices
- Low Saturation Voltage
- High Pulsed Current Capability
- Optional Gate Resistor (RG) and Gate-Emitter Resistor (RGE)
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封装图纸 (1)
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NGD8205ANT4G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | Ignition IGBT, N-Channel, 20 A, 350 V | DPAK-3 | 369C | 1 | Tape and Reel | 2500 | $0.7333 |
订购产品技术参数
| Product | V(BR)CES Typ (V) | IC Max (A) | VCE(sat) Typ (V) | VF Typ (V) | Eoff Typ (mJ) | Eon Typ (mJ) | Trr Typ (ns) | Irr Typ (A) | Gate Charge Typ (nC) | Short Circuit Withstand (us) | EAS Typ (mJ) | PD Max (W) | Co-Packaged Diode |
|---|
| NGD8205ANT4G | 350 | 20 | 1.3 | | | | | | | | 250 | 125 | No |
