NGTB30N135IHR1: IGBT 1350V 30A with Monolithic Free Wheeling Diode.

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides superior performance in demanding switching applications, and offers low on−state voltage with minimal switching losses. The IGBT is well suited for resonant or soft switching applications.

Features
  • Extremely Efficient Trench with Fieldstop Technology
  • 1350 V Breakdown Voltage
  • Optimized for Low Losses in IH Cooker Application
  • Designed for High System Level Robustness
  • These are Pb−Free Devices
Applications
  • Inductive Heating
  • Consumer Appliances
  • Soft Switching
End Products
  • Industrial
Data Sheets (1)
Document TitleDocument ID/SizeRevisionRevision Date
IGBT with Monolithic Free Wheeling DiodeNGTB30N135IHR1/D (131kB)0Sep, 2015
Package Drawings (1)
Document TitleDocument ID/SizeRevision
TO-247340AL (32.3kB)C
Order Information
ProductStatusCompliancePackageMSL*ContainerBudgetary Price/Unit
NGTB30N135IHR1WGActivePb-free Halide freeTO-247340ALNATube30$1.8
Specifications
ProductV(BR)CES Typ (V)IC Max (A)VCE(sat) Typ (V)VF Typ (V)Eoff Typ (mJ)Eon Typ (mJ)Trr Typ (ns)Irr Typ (A)Gate Charge Typ (nC)Short Circuit Withstand (µs)EAS Typ (mJ)PD Max (W)Co-Packaged Diode
NGTB30N135IHR1WG1350302.41.70.63220394No
IGBT with Monolithic Free Wheeling Diode (131kB) NGTB30N135IHR1
TO-247 NGTG40N120FL2