NGTB30N60FWG: IGBT 600V 30A Gen Mkt
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
特性- Optimized for Very Low VCEsat
- Low Switching Loss
- Soft Fast Reverse Recovery Diode
- 5µs Short Circuit Capability
| 优势- Reduces System Power Dissipation
|
应用- Solar Inverters
Motor Drives
Uninterruptible Power Supplies (UPS)
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参考手册 (1)
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| TO-247 | 340L-02 (57.4kB) | F |
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NGTB30N60FWG | Active | Pb-free
Halide free | IGBT 600V 30A Gen Mkt | TO-247-3 | 340L-02 | NA | Tube | 30 | $1.85 |
订购产品技术参数
| Product | V(BR)CES Typ (V) | IC Max (A) | VCE(sat) Typ (V) | VF Typ (V) | Eoff Typ (mJ) | Eon Typ (mJ) | Trr Typ (ns) | Irr Typ (A) | Gate Charge Typ (nC) | Short Circuit Withstand (us) | EAS Typ (mJ) | PD Max (W) | Co-Packaged Diode |
|---|
| NGTB30N60FWG | 600 | 30 | 1.45 | 1.9 | 0.65 | 0.65 | 72 | 6 | 170 | 5 | | 167 | Yes |
