NGTB40N120FL3: Ultra Field Stop IGBT -1200V 40A
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Ultra Field Stop Trench construction, and provides superior
performance in demanding switching applications, offering both low on
state voltage and minimal switching loss. The IGBT is well suited for
UPS and solar applications. Incorporated into the device is a soft and
fast co−packaged free wheeling diode with a low forward voltage.
Features- Extremely Efficient Trench with Ultra Field Stop Technology
- TJmax = 175°C
- Soft Fast Reverse Recovery Diode
- Optimized for High Speed Switching
- These are Pb−Free Devices
|
Applications- Solar Inverter
- Uninterruptible Power Inverter Supplies (UPS)
- Welding
| End Products |
Data Sheets (1)
Package Drawings (1)
| Document Title | Document ID/Size | Revision |
|---|
| TO-247 | 340AL (32.3kB) | C |
Order Information
| Product | Status | Compliance | Package | MSL* | Container | Budgetary Price/Unit |
|---|
| NGTB40N120FL3WG | Active | Pb-free
Halide free | TO-247 | 340AL | NA | Tube | 30 | Contact BDTIC |
Specifications
| Product | V(BR)CES Typ (V) | IC Max (A) | VCE(sat) Typ (V) | VF Typ (V) | Eoff Typ (mJ) | Eon Typ (mJ) | Trr Typ (ns) | Irr Typ (A) | Gate Charge Typ (nC) | Short Circuit Withstand (µs) | EAS Typ (mJ) | PD Max (W) | Co-Packaged Diode |
|---|
| NGTB40N120FL3WG | 1200 | 40 | 1.7 | 3 | 1.1 | 1.6 | 86 | 12 | 212 | | | 454 | Yes |
