NGTB40N120L3: Ultra Field stop IGBT - 1200V 40A, Low VCEsat

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for motor driver applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

Features
  • Extremely Efficient Trench with Ultra Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for Low VCEsat
  • These are Pb−Free Devices
Applications
  • Motor Drive Inverter
  • Industrial Switching
  • Welding
End Products
  • Industrial
Data Sheets (1)
Document TitleDocument ID/SizeRevisionRevision Date
IGBT - Ultra Field StopNGTB40N120L3W/D (155kB)1May, 2016
Package Drawings (1)
Document TitleDocument ID/SizeRevision
TO-247340AL (32.3kB)C
Order Information
ProductStatusCompliancePackageMSL*ContainerBudgetary Price/Unit
NGTB40N120L3WGActivePb-free Halide freeTO-247340ALNATube30Contact BDTIC
Specifications
ProductV(BR)CES Typ (V)IC Max (A)VCE(sat) Typ (V)VF Typ (V)Eoff Typ (mJ)Eon Typ (mJ)Trr Typ (ns)Irr Typ (A)Gate Charge Typ (nC)Short Circuit Withstand (µs)EAS Typ (mJ)PD Max (W)Co-Packaged Diode
NGTB40N120L3WG1200401.5531.51.58612220454Yes
IGBT - Ultra Field Stop (155kB) NGTB40N120L3
TO-247 NGTG40N120FL2