NGTB40N60L2: IGBT 600V 40A FS2 Low VCEsat

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.

Features
  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for Low VCEsat
  • 5 s Short−Circuit Capability
Applications
  • Motor Drive Inverters
  • Industrial Switching
  • Welding
Data Sheets (1)
Document TitleDocument ID/SizeRevisionRevision Date
IGBTNGTB40N60L2W/D (91kB)2Jan, 2016
Package Drawings (1)
Document TitleDocument ID/SizeRevision
TO-247340AL (32.3kB)C
Order Information
ProductStatusCompliancePackageMSL*ContainerBudgetary Price/Unit
NGTB40N60L2WGActivePb-free Halide freeTO-247340ALNATube30$2.27
Specifications
ProductV(BR)CES Typ (V)IC Max (A)VCE(sat) Typ (V)VF Typ (V)Eoff Typ (mJ)Eon Typ (mJ)Trr Typ (ns)Irr Typ (A)Gate Charge Typ (nC)Short Circuit Withstand (µs)EAS Typ (mJ)PD Max (W)Co-Packaged Diode
NGTB40N60L2WG6004022.40.281.17736.72285417Yes
IGBT (91kB) NGTB40N60L2
TO-247 NGTG40N120FL2