NGTB40N65IHR: IGBT Monolithic with Reverse Conducting Diode, 650 V, 40 A
This Insulated Gate Bipolar Transistor (IGBT) features robust and cost effective Field Stop (FS2) trench construction with a monolithic RC Diode. It provides a cost effective Solution for applications where diode losses are minimal. The IGBT is optimized for low conduction losses (low VCEsat) and is well suited for resonant or soft switching applications.
Features- Extremely Efficient Trench with Fieldstop Technology
- Low Conduction Loss Design for Soft Switching Application
- Reduced Power Dissipation in Induction Heating
- Reliable and Cost Effective Single Die Solution
- This is a Pb-Free Device
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Applications- Inductive Heating
- Air Conditioning PFC
- Welding
| End Products |
Data Sheets (1)
Package Drawings (1)
| Document Title | Document ID/Size | Revision |
|---|
| TO-247 | 340AL (32.3kB) | C |
Order Information
| Product | Status | Compliance | Package | MSL* | Container | Budgetary Price/Unit |
|---|
| NGTB40N65IHRWG | Active | Pb-free
Halide free | TO-247 | 340AL | NA | Tube | 30 | $0.99 |
Specifications
| Product | V(BR)CES Typ (V) | IC Max (A) | VCE(sat) Typ (V) | VF Typ (V) | Eoff Typ (mJ) | Eon Typ (mJ) | Trr Typ (ns) | Irr Typ (A) | Gate Charge Typ (nC) | Short Circuit Withstand (µs) | EAS Typ (mJ) | PD Max (W) | Co-Packaged Diode |
|---|
| NGTB40N65IHRWG | 650 | 40 | 1.55 | 1.5 | 0.42 | | | | 190 | | | 405 | No |
