NGTB50N120FL2WA: 1200 V Field Stop II IGBT, 50 A

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO-247-4L, package that provides significant reduction in Eon Losses compared to standard TO-247-3L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

Features
  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Improved Gate Control Lowers Switching Losses
  • Separate Emitter Drive Pin
  • TO-247-4L for Minimal Eon Losses
  • Optimized for High Speed Switching
  • These are Pb-Free Devices
Applications
  • Solar Inverter
  • Uninterruptible Power Inverter Supplies (UPS)
  • Neutral Point Clamp Topology
End Products
  • Industrial
Data Sheets (1)
Document TitleDocument ID/SizeRevisionRevision Date
IGBT - Field Stop II / 4-LeadNGTB50N120FL2WA/D (156kB)0May, 2016
Package Drawings (1)
Document TitleDocument ID/SizeRevision
TO-247 4-Lead340AR (32.0kB)O
Order Information
ProductStatusCompliancePackageMSL*ContainerBudgetary Price/Unit
NGTB50N120FL2WAGActivePb-free Halide freeTO-247 4-Lead340ARNATube30$2.07
Specifications
ProductV(BR)CES Typ (V)IC Max (A)VCE(sat) Typ (V)VF Typ (V)Eoff Typ (mJ)Eon Typ (mJ)Trr Typ (ns)Irr Typ (A)Gate Charge Typ (nC)Short Circuit Withstand (µs)EAS Typ (mJ)PD Max (W)Co-Packaged Diode
NGTB50N120FL2WAG1200502.252.181.42.1528117313Yes
IGBT - Field Stop II / 4-Lead (156kB) NGTB50N120FL2WA
TO-247 4-Lead NGTB75N65FL2WA