NGTB60N65FL2: IGBT 650V 60A Field Stop 2 IGBT

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.

Features
  • Extremely Efficient Trench with Field Stop Technology
  • Tjmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • 5µs Short-Circuit Capability
  • These are Pb-Free Devices
Applications
  • Half bridge inverter
  • T-Type inverter
  • I-Type inverter
End Products
  • Uninterrupted Power supplies (Offline UPS and Online UPS)
  • Solar Inverters / PV inverters
  • Motor Control
Data Sheets (1)
Document TitleDocument ID/SizeRevisionRevision Date
IGBT - Field Stop IINGTB60N65FL2W/D (103kB)1Oct, 2016
Package Drawings (1)
Document TitleDocument ID/SizeRevision
TO-247340AL (32.3kB)C
Order Information
ProductStatusCompliancePackageMSL*ContainerBudgetary Price/Unit
NGTB60N65FL2WGActivePb-free Halide freeTO-247340ALNATube30$4.77
Specifications
ProductV(BR)CES Typ (V)IC Max (A)VCE(sat) Typ (V)VF Typ (V)Eoff Typ (mJ)Eon Typ (mJ)Trr Typ (ns)Irr Typ (A)Gate Charge Typ (nC)Short Circuit Withstand (µs)EAS Typ (mJ)PD Max (W)Co-Packaged Diode
NGTB60N65FL2WG650601.642.130.661.59966.83185595Yes
IGBT - Field Stop II (103kB) NGTB60N65FL2
TO-247 NGTG40N120FL2