NGTD13T120F2: IGBT 1200V 15A FS2 bare die

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.

Features
  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Optimized for High Speed Switching
  • 10 µs Short Circuit Capability
  • These are Pb−Free Devices
Applications
  • Solar Inverter
  • Uninterruptible Power Inverter Supplies (UPS)
  • Welding
Data Sheets (1)
Document TitleDocument ID/SizeRevisionRevision Date
IGBT DieNGTD13T120F2WP/D (87kB)0
Order Information
ProductStatusCompliancePackageMSL*ContainerBudgetary Price/Unit
NGTD13T120F2WPActivePb-free Halide freeContact BDTICNAWJAR1Contact BDTIC
Specifications
ProductV(BR)CES Typ (V)IC Max (A)VCE(sat) Typ (V)VF Typ (V)Eoff Typ (mJ)Eon Typ (mJ)Trr Typ (ns)Irr Typ (A)Gate Charge Typ (nC)Short Circuit Withstand (µs)EAS Typ (mJ)PD Max (W)Co-Packaged Diode
NGTD13T120F2WP1200210
IGBT Die (87kB) NGTD13T120F2