NGTD30T120F2: IGBT 1200V 40A FS2 bare die

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.

Features
  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Optimized for High Speed Switching
  • 10 µs Short Circuit Capability
  • These are Pb−Free Devices
Applications
  • Solar Inverter
  • Uninterruptible Power Inverter Supplies (UPS)
  • Welding
Data Sheets (1)
Document TitleDocument ID/SizeRevisionRevision Date
IGBT DieNGTD30T120F2WP/D (78kB)0Mar, 2016
Order Information
ProductStatusCompliancePackageMSL*ContainerBudgetary Price/Unit
NGTD30T120F2WPActivePb-free Halide freeContact BDTICNAWJAR1$1.9
Specifications
ProductV(BR)CES Typ (V)IC Max (A)VCE(sat) Typ (V)VF Typ (V)Eoff Typ (mJ)Eon Typ (mJ)Trr Typ (ns)Irr Typ (A)Gate Charge Typ (nC)Short Circuit Withstand (µs)EAS Typ (mJ)PD Max (W)Co-Packaged Diode
NGTD30T120F2WP1200Limited by Tj(max)210
IGBT Die (78kB) NGTD30T120F2