NGTG35N65FL2: IGBT 650V 35A FS2 Solar/UPS
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for UPS and solar applications. Incorporated into the device is a soft
and fast co−packaged free wheeling diode with a low forward voltage.
Features- Extremely Efficient Trench with Field Stop Technology
- TJmax = 175°C
- Optimized for High Speed Switching
- 5µs Short−Circuit Capability
|
Applications- Solar Inverters
- Uninterruptible Power Supplies (UPS)
|
Application Notes (3)
Data Sheets (1)
| Document Title | Document ID/Size | Revision | Revision Date |
|---|
| IGBT - Field Stop II | NGTG35N65FL2W/D (82kB) | 1 | Sep, 2016 |
Reference Manuals (1)
Package Drawings (1)
| Document Title | Document ID/Size | Revision |
|---|
| TO-247 | 340AL (32.3kB) | C |
Order Information
| Product | Status | Compliance | Package | MSL* | Container | Budgetary Price/Unit |
|---|
| NGTG35N65FL2WG | Active | Pb-free
Halide free | TO-247 | 340AL | 1 | Tube | 30 | $1.4 |
Specifications
| Product | V(BR)CES Typ (V) | IC Max (A) | VCE(sat) Typ (V) | VF Typ (V) | Eoff Typ (mJ) | Eon Typ (mJ) | Trr Typ (ns) | Irr Typ (A) | Gate Charge Typ (nC) | Short Circuit Withstand (µs) | EAS Typ (mJ) | PD Max (W) | Co-Packaged Diode |
|---|
| NGTG35N65FL2WG | 650 | 35 | 1.7 | 2.2 | 0.28 | 0.84 | 68 | 7 | 125 | 5 | | 300 | No |
