NIS5112: Electronic Fuse
The NIS5112 is an integrated switch utilizing a high side N-channel FET driven by an internal charge pump. This switch features a MOSFET which allows for current sensing using inexpensive chip resistors intead of expensive, low impedance current shunts.It is designed to operate in 12 V systems and includes a robust thermal protection circuit.
Features- Integrated Power Device
- Power Device Thermally Protected
- No External Current Shunt Required
- Enable/Timer Pin
- Adjustable Slew Rate for Output Voltage
- 9 V to 18 V Input Range
- 30 mΩ Typical
- Internal Charge Pump
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Design & Development Tools (1)
Data Sheets (1)
Document Title | Document ID/Size | Revision | Revision Date |
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Electronic Fuse | NIS5112/D (410.0kB) | 9 | |
Application Notes (6)
Package Drawings (1)
Simulation Models (1)
Order Information
Product | Status | Compliance | Package | MSL* | Container | Budgetary Price/Unit |
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NIS5112D1R2G | Active | Pb-free
Halide free | SOIC-8 | 751-07 | 3 | Tape and Reel | 2500 | $1.32 |
NIS5112D2R2G | Active | Pb-free
Halide free | SOIC-8 | 751-07 | 3 | Tape and Reel | 2500 | $1.32 |
Specifications
Product | Type | VI Max (V) | rDS(on) Max (mΩ) | TSD Typ (°C) | Thyst Typ (°C) |
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NIS5112D1R2G | Latch Off | 18 | 35 | 135 | 40 |
NIS5112D2R2G | Auto-Retry | 18 | 35 | 135 | 40 |