NSBC114EDXV6: Dual NPN Bipolar Digital Transistor (BRT)
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
特性- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
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应用注释 (1)
数据表 (1)
仿真模型 (3)
封装图纸 (1)
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NSBC114EDXV6T1G | Active | AEC Qualified
Pb-free
Halide free | Dual NPN Bipolar Digital Transistor (BRT) | SOT-563 | 463A-01 | 1 | Tape and Reel | 4000 | $0.08 |
| NSBC114EDXV6T5G | Active | AEC Qualified
Pb-free
Halide free | Dual NPN Bipolar Digital Transistor (BRT) | SOT-563 | 463A-01 | 1 | Tape and Reel | 8000 | $0.08 |
| NSVBC114EDXV6T1G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | Dual NPN Bipolar Digital Transistor (BRT) | SOT-563 | 463A-01 | 1 | Tape and Reel | 4000 | $0.088 |
订购产品技术参数
| Product | Polarity | IC Continuous (A) | V(BR)CEO Min (V) | hFE Min | R1 (kΩ) | R2 (kΩ) | R1/R2 Typ | Vi(off) Max (V) | Vi(on) Min (V) |
|---|
| NSBC114EDXV6T1G | Dual NPN | 0.1 | 50 | 35 | 10 | 10 | 1 | 0.8 | 2.5 |
| NSBC114EDXV6T5G | Dual NPN | 0.1 | 50 | 35 | 10 | 10 | 1 | 0.8 | 2.5 |
| NSVBC114EDXV6T1G | Dual NPN | 0.1 | 50 | 35 | 10 | 10 | 1 | 0.8 | 2.5 |
