NSL12AW: High Current PNP Low VCE(sat) Bipolar Transistor

Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

特性
  • High Current Capability (3 A)
  • High Power Handling (Up to 650 mW)
  • Low VCE(s) (170 mV Typical @ 1 A)
  • Small Size
  • Pb-Free Package is Available
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
High Current Surface Mount PNP Silicon Low VCE(sat)Transistor for Battery Operated ApplicationsNSL12AW/D (125.0kB)3
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
LIB Model for NSL12AWT1NSL12AWT1.LIB (0.0kB)1
SIN Model for NSL12AWT1NSL12AWT1.SIN (1.0kB)1
SP2 Model for NSL12AWT1NSL12AWT1.SP2 (0.0kB)1
SP3 Model for NSL12AWT1NSL12AWT1.SP3 (0.0kB)1
封装图纸 (1)
Document TitleDocument ID/SizeRevision
SC-88/SC70-6/SOT-363 6 LEAD419B-02 (62.3kB)Y
产品订购型号
产品状况Compliance具体说明封装MSL*容器预算价格 (1千个数量的单价）
NSL12AWT1GActiveAEC Qualified Pb-free Halide freeHigh Current PNP Low VCE(sat) Bipolar TransistorSC-88-6 / SC-70-6 / SOT-363-6419B-021Tape and Reel3000$0.1467
NSL12AWT1Last ShipmentsHigh Current PNP Low VCE(sat) Bipolar TransistorSC-88-6 / SC-70-6 / SOT-363-6419B-021Tape and Reel3000
订购产品技术参数
ProductPolarityIC Continuous (A)V(BR)CEO Min (V)VCE(sat) Max (V)hFE MinhFE MaxfT Min (MHz)PTM Max (W)
NSL12AWT1GPNP2120.29100300-0.45
High Current Surface Mount PNP Silicon Low VCE(sat)Transistor for Battery Operated Applications (125.0kB) NSL12AW
LIB Model for NSL12AWT1 NSL12AW
SIN Model for NSL12AWT1 NSL12AW
SP2 Model for NSL12AWT1 NSL12AW
SP3 Model for NSL12AWT1 NSL12AW
SC-88/SC70-6/SOT-363 6 LEAD NUF2221
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