NSR01L30MX: 30 V, 100 mA Low IR Schottky Diode

This Schottky barrier diode is optimized for low leakage current applications. It is packaged in an ultra small x3DFN2 package that enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements.

特性
  • Very Low Forward Voltage Drop - 350 mV @ 1 mA
  • Low Reverse Current - 0.2 uA @ 10 V
  • ESD Rating - Human Body Model: Class 3BESD Rating - Machine Model: Class C
  • Pb and Halide Free Device
  • 100 mA of Continuous Forward Current
优势
  • Higher Efficiency
  • Higher Efficiency
  • ESD Robust
  • Enviromentally Safe
应用
  • LCD and Keypad Backlighting Camera Photo Flash Buck and Boost DC-DC Converters Reverse Voltage and Current Protection Clamping and Protection
终端产品
  • Mobile Handsets Wearables MP3 Players Digital Cameras and Camcorders GPS
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
LIB Model for NSR01L30MXnsr01l30mxt5g.rev0.lib0Apr, 2014
SIN Model for NSR01L30MXnsr01l30mxt5g.rev0.sin0Apr, 2014
SP2 Model for NSR01L30MXnsr01l30mxt5g.rev0.sp20Apr, 2014
SP3 Model for NSR01L30MXnsr01l30mxt5g.rev0.sp30Apr, 2014
封装图纸 (1)
Document TitleDocument ID/SizeRevision
X3DFN2, 0.62x0.32, 0.355P, (0201)152AF (23.5kB)A
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Schottky Barrier DiodeNSR01L30MX/D (44kB)1
产品订购型号
产品状况Compliance具体说明封装MSL*容器预算价格 (1千个数量的单价)
NSR01L30MXT5GActivePb-free Halide free30 V, 100 mA Low IR Schottky DiodeX3DFN-2152AF1Tape and Reel15000$0.0467
订购产品技术参数
ProductConfigurationVRRM Min (V)VF Max (V)IRM Max (uA)IO(rec) Max (A)IFSM Max (A)trr Max (ns)Cj Max (pF)
NSR01L30MXT5GSingle300.350.20.12-0.8
Schottky Barrier Diode (46kB) NSR01L30MX
LIB Model for NSR01L30MX NSR01L30MX
SIN Model for NSR01L30MX NSR01L30MX
SP2 Model for NSR01L30MX NSR01L30MX
SP3 Model for NSR01L30MX NSR01L30MX
X3DFN2, 0.62x0.32, 0.355P, (0201) ESD8351