NSR02F30MX: 200 mA, 30 V, x3DFN 0201 Schottky Barrier Diode
These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current that offers the most optimal power dissipation in applications. They are housed in a space saving x3DFN 0201 package ideal for space constraint applications.
特性- Low Forward Voltage Drop
- High Switching Speed
- Low Reverse Current
- These devices are Pb-free, Halogen free/BFR free and are RoHS compliant
| 优势- Reduces Power Dissipation
- Better Performance
- Reduces Power Dissipation
|
应用- LCD and Keypad Backlighting
Camera Photo Flash
Buck and Boost DC-DC Converters
Reverse Voltage and Current Protection
| 终端产品- Reverse Voltage and Current Protection
Mobile Handsets
Notebooks, PCs & PDA
GPS, MP3 Players
|
仿真模型 (4)
封装图纸 (1)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NSR02F30MXT5G | Active | Pb-free
Halide free | 200 mA, 30 V, x3DFN 0201 Schottky Barrier Diode | X3DFN-2 | 152AF | 1 | Tape and Reel | 15000 | $0.0467 |
订购产品技术参数
| Product | Configuration | VRRM Min (V) | VF Max (V) | IRM Max (uA) | IO(rec) Max (A) | IFSM Max (A) | trr Max (ns) | Cj Max (pF) |
|---|
| NSR02F30MXT5G | Single | 30 | 0.6 | 50 | 0.2 | 2 | 3 | 8 |
