NSR02F30NXT5G: Schottky Barrier Diode, 200 mA, 30 V
The Schottky diode is optimized for low forward voltage drop and low leakage current. The DSN2 Dual Silicon no lead package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN style package enables 100 percent utilization of the package area for active silicon offering a significant performance per board area advantage compared to products in plastic molded packages. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements.
特性- Low Forward Voltage Drop
- High Switching Speed
- High ESD Rating
- Low Reverse Current
| 优势- Reduces Power Dissipation
- Better Performance
- HBM: 3B MM: C
|
应用- LCD and Keypad Backlighting
Camera Photo Flash
Buck and Boost DC-DC Converters
| 终端产品- Reverse Voltage and Current Protection
Mobile Handsets
Notebooks, PCs & PDA
GPS, MP3 Players
|
应用注释 (3)
数据表 (1)
仿真模型 (4)
封装图纸 (1)
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NSR02F30NXT5G | Active | Pb-free
Halide free | Schottky Barrier Diode, 200 mA, 30 V, DSN2 (0201) Schottky Barrier Diode | DSN-2 | 152AA | 1 | Die Surf Tape and Reel | 5000 | $0.059 |
订购产品技术参数
| Product | Configuration | VRRM Min (V) | VF Max (V) | IRM Max (uA) | IO(rec) Max (A) | IFSM Max (A) | trr Max (ns) | Cj Max (pF) |
|---|
| NSR02F30NXT5G | Single | 30 | 0.37 | 7 | 0.2 | 4 | - | 7 |
