NSS20201MR6: Bipolar Transistor, Low VCE(sat), NPN, 2.0 A, 20 V

Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

特性
  • High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)
应用
  • Load Switching, Battery Charging, External Pass Transistor, DC/DC Converter, Complimentary Driver, Current Extention & Low Drop Out Regulation, Cathode Florescent Lamp drive, Peripheral Driver - LEDs, Motors, Relays
培训教材 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Power Saving Alternatives Using Low VCE(sat) BJTs (VoPPT)TND404/D (10341.0kB)0Aug, 2010
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
20V 2A LOW VCE(sat) NPN High Current TransistorNSS20201MR6T1G/D (47.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
TSOP-6318G-02 (64.1kB)V
产品订购型号
产品状况Compliance具体说明封装MSL*容器预算价格 (1千个数量的单价)
NSS20201MR6T1GActiveAEC Qualified Pb-free Halide freeBipolar Transistor, Low VCE(sat), NPN, 2.0 A, 20 VTSOP-6318G-021Tape and Reel3000$0.16
订购产品技术参数
ProductPolarityIC Continuous (A)V(BR)CEO Min (V)VCE(sat) Max (V)hFE MinhFE MaxfT Min (MHz)PTM Max (W)
NSS20201MR6T1GNPN2200.15300-2001.75
20V 2A LOW VCE(sat) NPN High Current Transistor (47.0kB) NSS20201MR6
Power Saving Alternatives Using Low VCE(sat) BJTs (VoPPT) NSS60601MZ4
TSOP-6 STF202