Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
特性
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应用
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| Document Title | Document ID/Size | Revision | Revision Date |
|---|---|---|---|
| Power Saving Alternatives Using Low VCE(sat) BJTs (VoPPT) | TND404/D (10341.0kB) | 0 | Aug, 2010 |
| Document Title | Document ID/Size | Revision | Revision Date |
|---|---|---|---|
| PSpice Model | NSS35200MR6T1.LIB (14.0kB) | 0 | |
| Saber Model | NSS35200MR6T1.SIN (14.0kB) | 0 | |
| Spice2 Model | NSS35200MR6T1.SP2 (14.0kB) | 0 | |
| Spice3 Model | NSS35200MR6T1.SP3 (14.0kB) | 0 |
| Document Title | Document ID/Size | Revision | Revision Date |
|---|---|---|---|
| Simple Battery Charger using a CCR | AND9031/D (345.0kB) | 2 |
| Document Title | Document ID/Size | Revision | Revision Date |
|---|---|---|---|
| Low VCE(sat) Transistor, PNP, 35 V, 5.0 A | NSS35200MR6/D (114.0kB) | 5 |
| Document Title | Document ID/Size | Revision |
|---|---|---|
| TSOP-6 | 318G-02 (64.1kB) | V |
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） | ||
|---|---|---|---|---|---|---|---|---|---|
| NSS35200MR6T1G | Active | AEC Qualified Pb-free Halide free | Low VCE(sat) Transistor, PNP, 35 V, 5.0 A | TSOP-6 | 318G-02 | 1 | Tape and Reel | 3000 | $0.2 |
| SNSS35200MR6T1G | Active | AEC Qualified PPAP Capable Pb-free Halide free | Low VCE(sat) Transistor, PNP, 35 V, 5.0 A | TSOP-6 | 318G-02 | 1 | Tape and Reel | 3000 | $0.236 |
| Product | Polarity | IC Continuous (A) | V(BR)CEO Min (V) | VCE(sat) Max (V) | hFE Min | hFE Max | fT Min (MHz) | PTM Max (W) |
|---|---|---|---|---|---|---|---|---|
| NSS35200MR6T1G | PNP | 2 | 35 | 0.31 | 100 | 400 | 100 | 1.75 |
| SNSS35200MR6T1G | PNP | 2 | 35 | 0.31 | 100 | 400 | 100 | 1.75 |
