NST489: 30 V, 2.0 A NPN Low VCE(sat) Bipolar Transistor
Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
特性- Low VCE(sat) Switching Transistor
- Pb-Free Package is Available
- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable
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应用- Applications- Load Management for Portables
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封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| TSOP-6 | 318G-02 (64.1kB) | V |
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NST489AMT1G | Active | AEC Qualified
Pb-free
Halide free | 30 V, 2.0 A NPN Low VCE(sat) Bipolar Transistor | TSOP-6 | 318G-02 | 1 | Tape and Reel | 3000 | $0.1333 |
| NSVT489AMT1G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | 30 V, 2.0 A NPN Low VCE(sat) Bipolar Transistor | TSOP-6 | 318G-02 | 1 | Tape and Reel | 3000 | $0.1519 |
| NST489AMT1 | Last Shipments | | 30 V, 2.0 A NPN Low VCE(sat) Bipolar Transistor | TSOP-6 | 318G-02 | 1 | Tape and Reel | 3000 | |
订购产品技术参数
| Product | Polarity | IC Continuous (A) | V(BR)CEO Min (V) | VCE(sat) Max (V) | hFE Min | hFE Max | fT Min (MHz) | PTM Max (W) |
|---|
| NST489AMT1G | NPN | 2 | 30 | 0.075 | 300 | 900 | 200 | 0.535 |
| NSVT489AMT1G | NPN | 2 | 30 | 0.075 | 300 | 900 | 200 | 0.535 |
