NTB35N15: Power MOSFET 150V 37A 50 mOhm Single N-Channel D2PAK
N-Channel Enhancement-Mode D2PAK
特性- Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
- Avalanche Energy Specified
- IDSS AND RDS (on) Specified at elevated temperature
- Mounting information provided for the D2PAK package
- Pb-Free Packages are Available
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应用- PWM Motor Controls
Power Supplies
Converters
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应用注释 (1)
封装图纸 (1)
Document Title | Document ID/Size | Revision |
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D2PAK 2 LEAD | 418B-04 (35.3kB) | L |
数据表 (1)
产品订购型号
产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价) |
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NTB35N15T4G | Active | Pb-free
Halide free | Power MOSFET 150V 37A 50 mOhm Single N-Channel D2PAK | D2PAK-3 | 418B-04 | 1 | Tape and Reel | 800 | $1.725 |
订购产品技术参数
Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
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NTB35N15T4G | N-Channel | Single | 150 | 20 | 4 | 37 | 178 | | | 50 | | 70 | 32 | 1.14 | 2275 | 450 | 90 |