NTD4809N: Power MOSFET 30V 58A 9 mOhm Single N-Channel DPAK
Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK
特性- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Driver Losses
- Optimized Gate Charge to Minimize Switching Losses
- These are Pb-Free Devices
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应用- CPU Power Delivery
DC-DC Coverters
Low Side Switching
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设计和开发工具 (1)
数据表 (1)
应用注释 (1)
封装图纸 (3)
仿真模型 (4)
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NTD4809N-1G | Last Shipments | Pb-free
Halide free | Power MOSFET 30V 58A 9 mOhm Single N-Channel DPAK | IPAK-4 | 369D | 1 | Tube | 75 | |
| NTD4809N-35G | Lifetime | Pb-free
Halide free | Power MOSFET 30V 58A 9 mOhm Single N-Channel DPAK | IPAK-3 | 369AD | 1 | Tube | 75 | |
| NTD4809NT4G | Active | Pb-free
Halide free | Power MOSFET 30V 58A 9 mOhm Single N-Channel DPAK | DPAK-3 | 369AA | 1 | Tape and Reel | 2500 | $0.1933 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
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| NTD4809NT4G | N-Channel | Single | 30 | 20 | 2.5 | 58 | 52 | | 14 | 9 | 11 | 25 | 5 | 9.2 | 1456 | 315 | 200 |
