NTD4860N: Power MOSFET 25V 65A 7.5 mOhm Single N-Channel DPAK
Power MOSFET Single N Channel, 25V, 65A, DPAK/IPAK
特性- Low Capacitance
- Optimized Gate Charge
- Low Rds(on)
- Trench Technology
| 优势- Minimize Driver Losses
- Minimize Switching Losses
- Minimize Conduction Losses
|
应用- Vcore Applications
DC-DC Converters
High/Low Side Switching
| 终端产品- Desktop PC, Graphic Cards, Game Consoles, and other computing and consumer products
|
设计和开发工具 (1)
数据表 (1)
应用注释 (1)
封装图纸 (3)
仿真模型 (4)
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NTD4860N-1G | Last Shipments | Pb-free
Halide free | Power MOSFET 25V 65A 7.5 mOhm Single N-Channel DPAK | IPAK-4 | 369D | 1 | Tube | 75 | |
| NTD4860N-35G | Last Shipments | Pb-free
Halide free | Power MOSFET 25V 65A 7.5 mOhm Single N-Channel DPAK | IPAK-3 | 369AD | 1 | Tube | 75 | |
| NTD4860NT4G | Active | Pb-free
Halide free | Power MOSFET 25V 65A 7.5 mOhm Single N-Channel DPAK | DPAK-3 | 369AA | 1 | Tape and Reel | 2500 | $0.2867 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| NTD4860NT4G | N-Channel | Single | 25 | 20 | 2.5 | 65 | 2 | | 11.1 | 7.5 | | | 4.7 | 3.5 | 1308 | 342 | 169 |
