NTD5802N: Power MOSFET 40V 101A 4.4 mOhm Single N-Channel DPAK _ BDTIC a Leading Distributor in China

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NTD5802N: Power MOSFET 40V 101A 4.4 mOhm Single N-Channel DPAK

Power MOSFET 40V 101A 4.4 mOhm Single N-Channel DPAK

特性

Low RDS(on)
Low Capacitance
Optimized Gate Charge
MSL 1/260C
AEC Q101 Qualified
100% Avalanche Tested
PbFree Devices
DCDC Converters
Motor Driver

优势

Minimize Conduction Losses
Minimizes Driver Losses
Minimizes Switching Losses

应用

CPU Power Delivery

应用注释 (1)

Document Title	Document ID/Size	Revision	Revision Date
MOSFET Gate-Charge Origin and its Applications	AND9083/D (191kB)	1	Aug, 2014

数据表 (1)

Document Title	Document ID/Size	Revision	Revision Date
Power MOSFET, 40 V, Single N-Channel, 101 A DPAK	NTD5802N/D (101kB)	7	Aug, 2014

仿真模型 (4)

Document Title	Document ID/Size	Revision	Revision Date
PSpice Model	NTD5802NT4G.LIB (2.0kB)	0
Saber Model	NTD5802NT4G.SIN (2.0kB)	0
Spice2 Model	NTD5802NT4G.SP2 (2.0kB)	0
Spice3 Model	NTD5802NT4G.SP3 (2.0kB)	0

封装图纸 (1)

Document Title	Document ID/Size	Revision
DPAK (SINGLE GAUGE) TO-252	369C (59.1kB)	E

产品订购型号

产品	状况	Compliance	具体说明	封装		MSL*	容器		预算价格 (1千个数量的单价）
NTD5802NT4G	Active	Pb-free Halide free	Power MOSFET 40V 101A 4.4 mOhm Single N-Channel DPAK	DPAK-3	369C	1	Tape and Reel	2500	$0.712

订购产品技术参数

Product	Channel Polarity	Configuration	V(BR)DSS Min (V)	VGS Max (V)	VGS(th) Max (V)	ID Max (A)	PD Max (W)	rDS(on) Max @ VGS = 2.5 V (mΩ)	rDS(on) Max @ VGS = 4.5 V (mΩ)	rDS(on) Max @ VGS = 10 V (mΩ)	Qg Typ @ VGS = 4.5 V (nC)	Qg Typ @ VGS = 10 V (nC)	Qgd Typ @ VGS = 4.5 V (nC)	Qrr Typ (nC)	Ciss Typ (pF)	Coss Typ (pF)	Crss Typ (pF)
NTD5802NT4G	N-Channel	Single	40	20	3.5	101	93.75		7.8	4.4		75	15	15	5300	850	550

Power MOSFET, 40 V, Single N-Channel, 101 A DPAK (101kB) NVD5802N

MOSFET Gate-Charge Origin and its Applications NVD5805N

PSpice Model NVD5802N

Saber Model NVD5802N

Spice2 Model NVD5802N

Spice3 Model NVD5802N

DPAK (SINGLE GAUGE) TO-252 NCV8408

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