NTHD3102C: Power MOSFET 20V 5.5A 45 mOhm Complementary ChipFET

Power MOSFET Complementary, 20 V +5.5 A/-4.2 A, ChipFET™

特性
  • Complementary N-Channel and P-Channel MOSFET
  • Small Size, 40% Smaller than a TSOP-6 Package
  • Leadless, SMD Package provides Great Thermal Characteristics
  • Leading Trench Technology for Low On Resistance
  • Reduced Gate Charge to Improve Switching Response
  • Pb-Free Package is Available
应用
  • DC-DC Conversion Circuits Load/Power Switching Single or Dual Cell Li-Ion Battery Supplied Devices Ideal for Power Management Applications in Portable, Battery Powered Products
应用注释 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Dual-Channel 1206A ChipFET™ Power MOSFET Recommended Pad Patternand Thermal PerformanceAND8061/D (38.0kB)0
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Power MOSFET Complementary, 20 V +5.5 A/-4.2 A, ChipFET¿NTHD3102C/D (95.0kB)2
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
P Spice ModelNTHD3102C.LIB (4.0kB)0
Saber ModelNTHD3102C.SIN (4.0kB)0
Spice 2 ModelNTHD3102C.SP2 (4.0kB)0
Spice 3 ModelNTHD3102C.SP3 (4.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
ChipFET1206A-03 (71.4kB)K
产品订购型号
产品状况Compliance具体说明封装MSL*容器预算价格 (1千个数量的单价)
NTHD3102CT1GActivePb-free Halide freePower MOSFET 20V 5.5A 45 mOhm Complementary ChipFETChipFET-81206A-031Tape and Reel3000$0.22
订购产品技术参数
ProductChannel PolarityConfigurationV(BR)DSS Min (V)VGS Max (V)VGS(th) Max (V)ID Max (A)PD Max (W)rDS(on) Max @ VGS = 2.5 V (mΩ)rDS(on) Max @ VGS = 4.5 V (mΩ)rDS(on) Max @ VGS = 10 V (mΩ)Qg Typ @ VGS = 4.5 V (nC)Qg Typ @ VGS = 10 V (nC)Qgd Typ @ VGS = 4.5 V (nC)Qrr Typ (nC)Ciss Typ (pF)Coss Typ (pF)Crss Typ (pF)
NTHD3102CT1GComplementaryDual2081.25.52.150457.91.56751010050
Power MOSFET Complementary, 20 V +5.5 A/-4.2 A, ChipFET¿ (95.0kB) NTHD3102C
Dual-Channel 1206A ChipFET™ Power MOSFET Recommended Pad Patternand Thermal Performance NTHD4P02
P Spice Model NTHD3102C
Saber Model NTHD3102C
Spice 2 Model NTHD3102C
Spice 3 Model NTHD3102C
ChipFET NTHS5443