NTHD3102C: Power MOSFET 20V 5.5A 45 mOhm Complementary ChipFET
Power MOSFET Complementary, 20 V +5.5 A/-4.2 A, ChipFET™
特性- Complementary N-Channel and P-Channel MOSFET
- Small Size, 40% Smaller than a TSOP-6 Package
- Leadless, SMD Package provides Great Thermal Characteristics
- Leading Trench Technology for Low On Resistance
- Reduced Gate Charge to Improve Switching Response
- Pb-Free Package is Available
|
应用- DC-DC Conversion Circuits
Load/Power Switching
Single or Dual Cell Li-Ion Battery Supplied Devices
Ideal for Power Management Applications in Portable, Battery Powered Products
|
应用注释 (1)
数据表 (1)
仿真模型 (4)
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| ChipFET | 1206A-03 (71.4kB) | K |
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NTHD3102CT1G | Active | Pb-free
Halide free | Power MOSFET 20V 5.5A 45 mOhm Complementary ChipFET | ChipFET-8 | 1206A-03 | 1 | Tape and Reel | 3000 | $0.22 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| NTHD3102CT1G | Complementary | Dual | 20 | 8 | 1.2 | 5.5 | 2.1 | 50 | 45 | | 7.9 | | 1.56 | 7 | 510 | 100 | 50 |
