NTHD4502N: Power MOSFET 30V 3.9A 85 mOhm Dual N-Channel ChipFET
This device is optimized for fast low side switching applications. It features a technology that provides a balance between low gate charge and low RDS(on)
特性- Planar Technology Device Offers Low RDS(on) and Fast Switching Speed
- Leadless ChipFET™ Package has 40% Smaller Footprint than TSOP-6. Ideal Device Applications Where Board Space is at a Premium.
- ChipFET™ Package Exhibits Excellent Thermal Capabilities. Ideal for Applications Where Heat Transfer is Required.
- Pb-Free Package Option for Green Manufacturing.
- Pb-Free Package is Available
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应用- DC-DC Buck or Boost Converters
Low Side Switching
Optimized for Battery and Low Side Switching Applications in Computing and Portable Equipment
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应用注释 (1)
数据表 (1)
仿真模型 (4)
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| ChipFET | 1206A-03 (71.4kB) | K |
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NTHD4502NT1G | Active | Pb-free
Halide free | Power MOSFET 30V 3.9A 85 mOhm Dual N-Channel ChipFET | ChipFET-8 | 1206A-03 | 1 | Tape and Reel | 3000 | $0.2533 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
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| NTHD4502NT1G | N-Channel | Dual | 30 | 20 | 3 | 3.9 | 2.1 | | 140 | 85 | 1.9 | 3.6 | 0.7 | 4 | 140 | 53 | 16 |
