NTHD4508N: Power MOSFET 20V 4.1A 75 mOhm Dual N-Channel ChipFET

Power MOSFET 20 V, 4.1 A, Dual N-Channel, ChipFET™

特性
  • Low RDS (on) and Fast Switching
  • Leadless ChipFET Package has 40% Smaller Footprint than TSOP-6
  • Excellent Thermal Capabilities where heat transfer is required.
  • Pb-Free Package Option for Green Manufacturing (G Suffix)
应用
  • DC-DC Buck/Boost Converters Battery and Low Side Switching in Portable Equipment such as MP3 Players, Cell Phones, DSCs, and PDAs. Level Shifting
应用注释 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Dual-Channel 1206A ChipFET™ Power MOSFET Recommended Pad Patternand Thermal PerformanceAND8061/D (38.0kB)0
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Power MOSFET 20 V, 4.1 A, Dual N-Channel, ChipFET™NTHD4508N/D (55.0kB)3
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
P Spice ModelNTHD4508N.LIB (1.0kB)0
Saber ModelNTHD4508N.SIN (1.0kB)0
Spice 2 ModelNTHD4508N.SP2 (1.0kB)0
Spice 3 ModelNTHD4508N.SP3 (1.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
ChipFET1206A-03 (71.4kB)K
产品订购型号
产品状况Compliance具体说明封装MSL*容器预算价格 (1千个数量的单价)
NTHD4508NT1GActivePb-free Halide freePower MOSFET 20V 4.1A 75 mOhm Dual N-Channel ChipFETChipFET-81206A-031Tape and Reel3000$0.256
订购产品技术参数
ProductChannel PolarityConfigurationV(BR)DSS Min (V)VGS Max (V)VGS(th) Max (V)ID Max (A)PD Max (W)rDS(on) Max @ VGS = 2.5 V (mΩ)rDS(on) Max @ VGS = 4.5 V (mΩ)rDS(on) Max @ VGS = 10 V (mΩ)Qg Typ @ VGS = 4.5 V (nC)Qg Typ @ VGS = 10 V (nC)Qgd Typ @ VGS = 4.5 V (nC)Qrr Typ (nC)Ciss Typ (pF)Coss Typ (pF)Crss Typ (pF)
NTHD4508NT1GN-ChannelDual20121.24.12.1115752.60.7618010025
Power MOSFET 20 V, 4.1 A, Dual N-Channel, ChipFET™ (55.0kB) NTHD4508N
Dual-Channel 1206A ChipFET™ Power MOSFET Recommended Pad Patternand Thermal Performance NTHD4P02
P Spice Model NTHD4508N
Saber Model NTHD4508N
Spice 2 Model NTHD4508N
Spice 3 Model NTHD4508N
ChipFET NTHS5443