NTHD4P02: Power MOSFET -20V -3A 155 mOhm Dual P-Channel ChipFET FETky
Power MOSFET -20V -3A 155 mOhm Dual P-Channel ChipFET FETky
特性- Leadless SMD package featuring a MOSFET and Schottky Diode
- 40% smaller than TSOP-6 package with similar thermal characteristics
- Independent pinout to each device to ease circuit design
- Ultra low VF Schottky
- Pb-Free Package is Available
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应用- Li-Ion Battery Charging
High side DC-DC Conversion circuits
High side drive for small brushless DC motors
Power management in portable, battery powered products
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应用注释 (2)
数据表 (1)
仿真模型 (4)
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| ChipFET | 1206A-03 (71.4kB) | K |
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NTHD4P02FT1G | Active | Pb-free
Halide free | Power MOSFET -20V -3A 155 mOhm Dual P-Channel ChipFET FETky | ChipFET-8 | 1206A-03 | 1 | Tape and Reel | 3000 | $0.16 |
| NTHD4P02FT1 | Obsolete | | Power MOSFET -20V -3A 155 mOhm Dual P-Channel ChipFET FETky | ChipFET-8 | 1206A-03 | 1 | Tape and Reel | 3000 | |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| NTHD4P02FT1G | P-Channel | with Schottky Diode | 20 | 12 | 1.2 | 3 | 2.1 | 240 | 155 | | 6 | | 0.9 | 15 | 185 | 95 | 30 |
