NTJD4105C: Small Signal MOSFET 20V 775mA 220 mOhm Complementary SC−88
This complementary dual device was designed with a small package (2 x 2 mm) and low RDS(on) MOSFETs for minimum footprint and increased circuit efficiency. The low RDS(on) performance is particularly suited for single or dual cell Li-Ion battery supplied devices such as cell phones, media players, digital cameras, and PDAs.
特性- Complementary N and P Channel Device
- Leading -8.0 V Trench for Low RDS(on) Performance
- ESD Protected Gate-ESD Rating: Class 1
- SC-88 Package for Small Footprint (2x2mm)
- Pb-Free Packages are Available
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应用- DC-DC Conversion
Load/Power Switching
Single or Dual Cell Li-Ion Battery Supplied Devices
Cell Phones, MP3s, Digital Cameras, and PDAs
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仿真模型 (4)
封装图纸 (1)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NTJD4105CT1G | Active | Pb-free
Halide free | Small Signal MOSFET 20V 775mA 220 mOhm Complementary SC−88 | SC-88-6 / SC-70-6 / SOT-363-6 | 419B-02 | 1 | Tape and Reel | 3000 | $0.0867 |
| NTJD4105CT2G | Active | Pb-free
Halide free | Small Signal MOSFET 20V 775mA 220 mOhm Complementary SC−88 | SC-88-6 / SC-70-6 / SOT-363-6 | 419B-02 | 1 | Tape and Reel | 3000 | $0.0867 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| NTJD4105CT1G | Complementary | Dual | 20 | 12 | 1.5 | 0.63 | 0.27 | 445 | 375 | | 1.3 | | 0.4 | | 33 | 13 | 2.8 |
| NTJD4105CT2G | Complementary | Dual | 20 | 12 | 1.5 | 0.63 | 0.27 | 445 | 375 | | 1.3 | | 0.4 | | 33 | 13 | 2.8 |
