NTJS4151P: Power MOSFET -20V -4.2A 60 mOhm Single P-Channel SC−88
Trench Power MOSFET -20 V, -4.2 A, Single P-Channel, SC-88
特性- Leading Trench Technology for Low RDS(on) Extending Battery Life
- SC-88 Small Outline (2x2 mm) for Maximum Circuit Board Utilization, same as SC-70-6
- Gate Diodes for ESD Protetion
- Pb-Free Package is Available
|
应用- High Side Load Switch
Cell Phones, Computing, Digital Cameras, MP3s and PDAs
|
应用注释 (1)
数据表 (1)
仿真模型 (4)
封装图纸 (1)
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NTJS4151PT1G | Active | Pb-free
Halide free | Power MOSFET -20V -4.2A 60 mOhm Single P-Channel SC−88 | SC-88-6 / SC-70-6 / SOT-363-6 | 419B-02 | 1 | Tape and Reel | 3000 | $0.0867 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| NTJS4151PT1G | P-Channel | Single | 20 | 12 | 1.2 | 4.2 | 1 | 70 | 47 | | 10 | | 2.8 | 0.23 | 850 | 160 | 110 |
