NTLGD3502N: Power MOSFET 20V 4.3A 60 mOhm Dual N-Channel DFN6
Power MOSFET 20 V, 5.8 A/4.6 A Dual N-Channel, DFN6 3x3 mm Package
特性- Exposed Drain Package
- Excellent Thermal Resistance for Superior Heat Dissipation
- Low Threshold Levels
- Low Profile (< 1 mm) Allows It to Fit Easily into Extremely Thin Environments
- This is a Pb-Free Device
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应用- DC-DC Converters (Buck and Boost Circuits)
| 终端产品- Power Supplies and Hard Disk Drives
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仿真模型 (2)
| Document Title | Document ID/Size | Revision | Revision Date |
|---|
| PSpice Model | NTLGD3502N.LIB (4.0kB) | 0 | |
| Spice3 Model | NTLGD3502N.SP3 (4.0kB) | 0 | |
封装图纸 (1)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NTLGD3502NT1G | Last Shipments | Pb-free
Halide free | Power MOSFET 20V 4.3A 60 mOhm Dual N-Channel DFN6 | DFN-6 | 506AG | 1 | Tape and Reel | 3000 | |
| NTLGD3502NT2G | Active | Pb-free
Halide free | Power MOSFET 20V 4.3A 60 mOhm Dual N-Channel DFN6 | DFN-6 | 506AG | 1 | Tape and Reel | 3000 | $0.42 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| NTLGD3502NT2G | N-Channel | Dual | 20 | 20 | 2 | 5.8 | 1.74 | | 60 | | 2.9 | | 1.1 | 7 | 250 | 138 | 52 |
