NTLJF4156N: Power MOSFET 30V 4.6A 70 mOhm Single N-Channel WDFN-6 FETky
Power MOSFET and Schottky Diode 30 V, 4.0 A, µCool™ N-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package
特性- WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction
- Co-Packaged MOSFET and Schottky For Easy Circuit Layout
- RDS(on) Rated at Low VGS=1.5 V
- Low Profile (< 0.8mm) for Easy Fit in Thin Environments
- Low VF Schottky
- This is a Pb-Free Device
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应用- DC-DC Converters
Li-Ion Battery Applications in Cell Phones, PDAs, Media Players
Color Display and Camera Flash Regulators
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应用注释 (3)
数据表 (1)
仿真模型 (4)
封装图纸 (1)
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NTLJF4156NT1G | Active | Pb-free
Halide free | Power MOSFET 30V 4.6A 70 mOhm Single N-Channel WDFN-6 FETky | WDFN-6 | 506AN | 1 | Tape and Reel | 3000 | $0.14 |
| NTLJF4156NTAG | Active | Pb-free
Halide free | Power MOSFET 30V 4.6A 70 mOhm Single N-Channel WDFN-6 FETky | WDFN-6 | 506AN | 1 | Tape and Reel | 3000 | $0.14 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| NTLJF4156NT1G | N-Channel | with Schottky Diode | 30 | 8 | 1 | 4 | 2.3 | 90 | 70 | | 5.4 | | 1.24 | 5 | 427 | 51 | 32 |
| NTLJF4156NTAG | N-Channel | with Schottky Diode | 30 | 8 | 1 | 4 | 2.3 | 90 | 70 | | 5.4 | | 1.24 | 5 | 427 | 51 | 32 |
