NTLJS3113P: Power MOSFET -20V -7.7A 40 mOhm Single P-Channel WDFN6
Power MOSFET -20 V, -9.5 A, µCool™ Single P-Channel 2x2 mm WDFN Package
特性- WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction
- 2x2 mm Footprint Same as SC-88 Package
- Lowest RDS(on) Solution in 2x2 mm Package
- 1.5 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate Drive
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应用- DC-DC Converters (Buck and Boost Circuits)
Optimized for Battery and Load Management Applications in Portable Equipment such as Cell Phones, PDAs, and Media Players
High Side Load Switch
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应用注释 (2)
数据表 (1)
仿真模型 (4)
封装图纸 (1)
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NTLJS3113PT1G | Active | Pb-free
Halide free | Power MOSFET -20V -7.7A 40 mOhm Single P-Channel WDFN6 | WDFN-6 | 506AP | 1 | Tape and Reel | 3000 | $0.16 |
| NTLJS3113PTAG | Active | Pb-free
Halide free | Power MOSFET -20V -7.7A 40 mOhm Single P-Channel WDFN6 | WDFN-6 | 506AP | 1 | Tape and Reel | 3000 | $0.16 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
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| NTLJS3113PT1G | P-Channel | Single | 20 | 8 | 1 | 7.7 | 3.3 | 50 | 40 | | 13 | | 2.9 | 44 | 1329 | 213 | 120 |
| NTLJS3113PTAG | P-Channel | Single | 20 | 8 | 1 | 7.7 | 3.3 | 50 | 40 | | 13 | | 2.9 | 44 | 1329 | 213 | 120 |
